The c.RAPID 200 stand-alone RTP system meets the exacting requirements of R&D and production lines and combines high performance and flexibility with low total cost of ownership. As the Tier-1-supplier for key applications in the field of WBG technologies we have been able to prove its performance intensively in manufacturing sites worldwide.

With „Gen 2“ centrotherm releases the new version of c.RAPID 200 with enhanced features and optimizations that strengthen our position as technology leader for WBG material processing.

The 150 mm / 200 mm bridge tool is capable for wafer processing either with susceptor or box configuration and suitable for atmospheric and vacuum operations. Its enhanced temperature range (RT-1350 °C) supports the surface and emissivity-independent processing of all substrates from WBG materials such as SiC, GaN, sapphire, diamond, GaAs through to silicon.

The system utilizes a pyrometer-based temperature measurement system, enabling precise processes at both low and high temperatures. Independent lamp control and predictive PID control further ensure excellent thermal accuracy and repeatabilit