c.ACTIVATOR 200 has been developed for high-temperature annealing applications in high-volume SiC device manufacturing and is also ideally suited for a wide range of other materials. The bridging tool provides wafer size capabilities up to 200 mm and features a unique, all-metal-free process tube and heating concept that enables process temperatures of up to 2000 °C.

Building on this proven design, centrotherm now introduces the new c.ACTIVATOR 200 PRO, which offers a 50% increase in throughput enabled by increased boat capacity and significantly shorter cycle time made possible by a higher unloading temperature.

The primary application of c.ACTIVATOR 200 is electrical activation through post-implantation annealing for SiC MOSFET and diode manufacturing at temperatures reaching 2000 °C.

In addition, the systems are used for high-temperature hydrogen annealing to clean, smooth, and round trenches after RIE etching, thereby improving channel mobility and reducing field crowding at sharp corners in trench MOSFETs. Further applications include pre & post SiC epi annealing, cost efficient dopant activation of GaN wafers, AlN seed layer annealing and annealing for perfect bonding interface of engineering SiC wafers.