The c.OXIDATOR 200 high-temperature oxidation furnace is designed for the special requirements of SiC oxidation and is also suitable for silicon oxidation. The high-volume bridging tool supports wafer sizes up to 200 mm and optionally enables in-situ wet oxidation as well as H₂ and NH₃ annealing applications.

After further development centrotherm just launched c.OXIDATOR 200 PRO, offering 50% higher throughput enabled by larger boats and the ability to unload the machine at higher tempe-
ratures which significantly shortens cycle time.

Temperatures of up to 1500 °C enable a broad range of SiC oxidation processes and the formation of oxide layers with low interface trap density (Dit) and high channel mobility. The reactor combines high performance, compact footprint, low CoO, and maximum process flexibility.

The tube and heating elements inside the vacuum reactor chamber are engineered for the safe use of toxic and flammable gases. Post-oxidation annealing (POA) in NO, N₂O, or NH₃ atmospheres improves the SiO₂/SiC interface, resulting in higher channel mobility, improved stability and longer oxide lifetime.

Vacuum capability, combined with H₂ and forming gas annealing processes make c.OXIDATOR ideal for the development, optimization, and production of high-quality thermal gate oxides, as well as essential pre- and post-treatments for deposited oxides.

Its corrosion-resistant design allows the safe use of chlorine supplied via a DCE bubbler for equipment cleaning without causing long-term damage.