ANNEALING

High-temperature furnace for the annealing of SiC and other materials in Ar, N2 and H2 ambient

The centrotherm c.ACTIVATOR has been developed for high-temperature annealing applications in high-volume SiC device manufacturing but it is also ideally suited for other materials. There are two versions available providing wafer size capabilities up to 200 mm. The unique all metal free design of the centrotherm process tube and heating system allows process temperatures up to 2000 °C.

The main application for c.ACTIVATOR is the electrical activation by post implantation annealing for SiC MOSFET and diode manufacturing at high temperatures of up to 2000°C.

Further applications are

  • High-temperature hydrogen annealing to smooth, clean and round trenches after (RIE) etching in order to improve channel mobility and field crowding on sharp corners in trench MOSFET manufacturing
  • High-temperature SiC substrate annealing up to 2000°C in Ar (or H2) ambient to convert harmfull BPD defects into less harmfull TED defects which improves SiC wafer quality prior and after SiC epitaxy
  • Cost-efficient dopant activation in GaN wafers at 1150 - 1250°C
  • Annealing of AlN seed layers and AlN epitaxial layers at ~1700°C

Processes

  • SiC substrate annealing
  • Post implantation annealing
  • H2 annealing for trench optimization
  • GaN annealing
  • AlN annealing

Options

  • Load lock - mini environment with N2 purge option for up to 25% throughput enhancement
  • Vacuum processing < 10-3 mbar
  • Automated wafer handling system for 100 mm and 150 mm wafers
  • Internal storage: 6 x 25 wafers (optional: 12 x 25 wafers)
  • Higher throughput up to 100,000 wafers/year

Sales Semiconductor & Microelectronics

Tel. +49 7344 918 6794
E-Mail

Find us at

ECSCRM
ECSCRM
Vinci International Convention Centre Tours, France

Features & Benefits

  • High activation rate
  • Minimum surface roughness (with appropriate C-cap)
  • Maximum temperature 2000 °C
  • High-temperature-stable heating cassette
  • Small footprint (1.9 m2)
  • Continuous operation ≤1600 °C
  • All metal-free heaters and insulation
  • Heating ramp up to 100 K/min
  • Batch size up to 50 wafers (150 mm)
  • Automated calibration
  • Profiling thermocouple
High-temperature processing

High-temperature processing

Wafer sizes up to 200 mm

Wafer sizes up to 200 mm

Compound semiconductors

Compound semiconductors

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This is the website of centrotherm international AG, Blaubeuren. If you are looking for the website of Centrotherm Systemtechnik GmbH, Brilon, Germany please click here. Please note that the two companies have no business connection with one another.