High-temperature furnace for the annealing of SiC and other materials in Ar, N2 and H2 ambient
The centrotherm c.ACTIVATOR has been developed for high-temperature annealing applications in high-volume SiC device manufacturing but it is also ideally suited for other materials. There are two versions available providing wafer size capabilities up to 200 mm. The unique all metal free design of the centrotherm process tube and heating system allows process temperatures up to 2000 °C.
The main application for c.ACTIVATOR is the electrical activation by post implantation annealing for SiC MOSFET and diode manufacturing at high temperatures of up to 2000°C.
Further applications are
High-temperature hydrogen annealing to smooth, clean and round trenches after (RIE) etching in order to improve channel mobility and reduce field crowding on sharp corners in trench MOSFET manufacturing
Cost-efficient dopant activation in GaN wafers at 1150 - 1250°C
Annealing of AlN seed layers and AlN epitaxial layers at ~1700°C
Processes
SiC annealing
Post implantation annealing
H2 annealing for trench optimization
GaN annealing
AlN annealing
Options
Load lock - mini environment with N2 purge option for up to 25% throughput enhancement
Vacuum processing < 10-3 mbar
Automated wafer handling system
Higher throughput > 100,000 wafers/year (depending on process)
