Rapid Thermal Processing system for silicon and compound semiconductors

The stand-alone RTP system c.RAPID 200 has been especially developed for multiple process requirements in R&D and production lines. High performance and flexibility combined with low cost of ownership make it the best choice in rapid thermal processing.

The capability to run a substrate on a susceptor or within a box in combination with atmospheric or vacuum operation enables a wide range of possible applications for compound semiconductors (e.g. for SiC or GaN).

Its wafer surface-independent temperature controllability is unique among all existing RTP solutions. The pyrometer-based temperature measurement system enables processes at low and high temperatures. Independent lamp control combined with predictive PID control provides excellent thermal accuracy and repeatability.

c.RAPID 200 operates with a fully automatic loading system and is available as single or dual chamber version and with up to 4 cassette stations.


  • Rapid Thermal Annealing (RTA)
    - Ion implant annealing
    - Contact/metal anneal
    - Source/drain anneal
  • Silicide formation (Ti, Co, Ni, Pt, etc.)
  • PSG reflow
  • Dopant activation

Sales Semiconductor & Microelectronics

Tel. +49 7344 918 6794

Find us at

Messe München | Munich, Germany

Features & Benefits

  • Ramp rate up to 40 K/s (150 mm silicon wafer within a box)
  • Side-by-side installation
  • Fully automated wafer handling

Uncompromising reliability

  • Pressure controlled vacuum or atmospheric operation
  • Excellent temperature uniformity
  • Precise ambient control

Maximum flexibility

  • Substrates up to 200 mm on susceptor or in boxes
  • Configurable with 2 process modules and up to 4 cassette stations
  • SMIF compatibility
Wafer sizes up to 200 mm

Wafer sizes up to 200 mm

Compound semiconductors

Compound semiconductors

Automated operation

Automated operation

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