RTP System
Rapid Thermal Processing for Compound Semiconductor and Silicon
The stand-alone c.RAPID 150 has been especially developed for multiple process requirements in R&D and production lines and for a direct transfer of the development process to production.
- Pressure controlled vacuum or atmospheric use
- High flexibility: Si wafers or substrates on susceptor up to 6"
- Ramp rate up to 150 K/s
- Excellent temperature uniformity
- Precise ambient control
- High reliability
- Side-by-side installation possible
Applications
- Annealing, contact annealing, source/drain anneal, barrier metal anneal
- Silicides
- Oxidation
- Dopant activation
Note: centrotherm photovoltaics AG reserves the right to make changes in the product specifications at any time and without notice.
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